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      光刻與薄膜覆蓋
      光刻
      薄膜覆蓋
      MEMS
      TSV封裝
      TSV封裝 您的位置:主頁 > 中文版 > 光刻與薄膜覆蓋 > TSV封裝
       Utilizing a broad base of services and patterns, FSM is one of the few pattern wafer providers to offer TSV (Through Silica Via) patterns and TSV services. TSV services include DRIE etching, deposition, bonding, and thinning. All of the patterns that we have available can be patterned and then processed through single and multiple steps.

                

      Pattern Wafers
      TSV 100 SiVia
      TSV 1060 SiVia
      TSV 530 SiVia
      Packaging Bumped Patterns
      Daisy Chain Patterns

      Process Capabilities
      Etching
      Thinning
      Bonding
      Deposition

      TSV 100 SiVia

      FSM offers Through-Silicon Via (TSV) wafers with a via depth of 100um and a diameter of 50um.

      The Through-Silicon Via (TSV) is etched with excellent sidewall surface roughness from the center of the wafer to the edge of the wafer aligned to the notch.

      All Through Silicon Vias are etched on a 10 to 100um Via Etch Pattern Layout for a 200mm wafer.

      The electroplated copper layer is 10,000 angstroms followed by 2um Cu seed layer and 1000 angstroms Titanium Liner on TEOS. 

      TSV 1060 SiVia

      FSM offers Through-Silicon Via (TSV) wafers with the ability to electrical test vias with diameters of 10um, 20um, 30um, 40um, 45um, 50um, 55um, and 60um.

      The Through-Silicon Via (TSV) is etched with excellent sidewall surface roughness from the center of the wafer to the edge of the wafer aligned to the notch.
       All Through-Silicon Vias are etched on a 200mm wafer.

      The electroplated copper layer is 10,000 angstroms followed by 2um Cu seed layer and 1000 angstroms Titanium Liner on TEOS.
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